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profet ? bts 410 d2 semiconductor group 1 03.97 smart highside power switch features overload protection current limitation short circuit protection thermal shutdown overvoltage protection (including load dump) fast demagnetization of inductive loads reverse battery protection 1 ) undervoltage and overvoltage shutdown with auto-restart and hysteresis cmos diagnostic output open load detection in on-state cmos compatible input loss of ground and loss of v bb protection e lectro s tatic d ischarge ( esd ) protection application m c compatible power switch with diagnostic feedback for 12 v and 24 v dc grounded loads all types of resistive, inductive and capacitve loads replaces electromechanical relays, fuses and discrete circuits general description n channel vertical power fet with charge pump, ground referenced cmos compatible input and diagnostic feedback, monolithically integrated in smart sipmos a technology. fully protected by embedded protection functions. + v bb in st signal gnd esd profet a out gnd logic voltage sensor voltage source open load detection short circuit detection charge pump level shifter temperature sensor rectifier limit for unclamped ind. loads gate protection current limit 2 4 1 3 5 load gnd load v logic overvoltage protection 1 ) with external current limit (e.g. resistor r gnd =150 w ) in gnd connection, resistors in series with in and st connections, reverse load current limited by connected load. product summary overvoltage protection v bb ( az ) 65 v operating voltage v bb ( on ) 4.7 ... 42 v on-state resistance r on 220 m w load current (iso) i l ( iso ) 1.8 a current limitation i l ( scr ) 5a to-220ab/5 5 standard 1 5 straight leads 1 5 smd
bts 410 d2 semiconductor group 2 pin symbol function 1 gnd - logic ground 2 in i input, activates the power switch in case of logical high signal 3v bb + positive power supply voltage, the tab is shorted to this pin 4 st s diagnostic feedback, low on failure 5 out (load, l) o output to the load maximum ratings at t j = 25 c unless otherwise specified parameter symbol values unit supply voltage (overvoltage protection see page 3) v bb 65 v load dump protection 2 ) v loaddump = u a + v s , u a = 13.5 v r i 3 ) = 2 w , r l = 6.6 w , t d = 400 ms, in= low or high v load dump 4 ) 100 v load current (short circuit current, see page 4) i l self-limited a operating temperature range storage temperature range t j t stg -40 ...+150 -55 ...+150 c power dissipation (dc), t c 25 c p tot 50 w inductive load switch-off ener gy dissipation, sin g le pulse v bb = 12v, t j, start = 150c, t c = 150c const. i l = 1.8 a, z l = 2.3 h, 0 w : e as 4.5 j electrostatic dischar g e capabilit y ( esd ) in: ( human bod y model ) all other pins: acc. mil-std883d, method 3015.7 and esd assn. std. s5.1-1993 v esd 1 2 kv input voltage (dc) v in -0.5 ... +6 v current through input pin (dc) current through status pin (dc) see internal circuit diagrams page 6 i in i st 5.0 5.0 ma thermal characteristics parameter and conditions s y mbol values unit min typ max thermal resistance chip - case: junction - ambient (free air): r thjc r thja -- -- -- -- 2.5 75 k/w smd version, device on pcb 5) :--35-- 2 ) supply voltages higher than v bb(az) require an external current limit for the gnd and status pins, e.g. with a 150 w resistor in the gnd connection and a 15 k w resistor in series with the status pin. a resistor for the protection of the input is integrated. 3) r i = internal resistance of the load dump test pulse generator 4) v load dump is setup without the dut connected to the generator per iso 7637-1 and din 40839 5 ) device on 50mm*50mm*1.5mm epoxy pcb fr4 with 6cm 2 (one layer, 70 m m thick) copper area for v bb connection. pcb is vertical without blown air.
bts 410 d2 semiconductor group 3 electrical characteristics parameter and conditions symbol values unit at t j = 25 c, v bb = 12 v unless otherwise specified min typ max load switching capabilities and characteristics on-state resistance (pin 3 to 5) i l = 1.6 a t j =25 c: t j =150 c: r on -- 190 390 220 440 m w nominal load current, iso norm ( pin 3 to 5 ) v on = 0.5 v, t c = 85 c i l(iso) 1.6 1.8 -- a output current (pin 5 ) while gnd disconnected or gnd pulled up, v bb =30 v, v in = 0, see diagram page 7, t j =-40...+150c i l(gndhigh) -- -- 1 ma turn-on time in to 90% v out : turn-off time in to 10% v out : r l = 12 w , t j =-40...+150c t on t off 12 5 -- -- 125 85 m s slew rate on 10 to 30% v out , r l = 12 w , t j =-40...+150c d v /dt on -- -- 3 v/ m s slew rate off 70 to 40% v out , r l = 12 w , t j =-40...+150c -d v /dt off -- -- 6 v/ m s operating parameters operating voltage 6 ) t j =-40...+150c: v bb(on) 4.7 -- 42 v undervoltage shutdown t j =25c: t j =-40...+150c: v bb(under) 2.9 2.7 -- -- 4.5 4.7 v undervoltage restart t j =-40...+150c: v bb(u rst) -- -- 4.9 v undervolta g e restart of char g e pump see diagram page 12 v bb(ucp) -- 5.6 6.0 v undervolta g e h y steresis d v bb(under) = v bb(u rst) - v bb(under) d v bb(under) -- 0.1 -- v overvoltage shutdown t j =-40...+150c: v bb(over) 42 -- 52 v overvoltage restart t j =-40...+150c: v bb(o rst) 40 -- -- v overvoltage hysteresis t j =-40...+150c: d v bb(over) -- 0.1 -- v overvoltage protection 7 ) t j =-40...+150c: i bb =4 ma v bb(az) 65 70 -- v standby current (pin 3) t j =-40...+25c : v in =0, i st 0 , t j = 150c: i bb(off) -- -- 10 18 15 25 m a leakage output current (included in i bb ( off ) ) v in =0 i l(off) -- -- 20 m a operating current (pin 1) 8) , v in =5 v, t j =-40...+150c i gnd -- 1 2.1 ma 6 ) at supply voltage increase up to v bb = 5.6 v typ without charge pump, v out ? v bb - 2 v 7) meassured without load . see also v on(cl) in table of protection functions and circuit diagram page 7.
bts 410 d2 parameter and conditions symbol values unit at t j = 25 c, v bb = 12 v unless otherwise specified min typ max semiconductor group 4 protection functions initial peak short circuit current limit (pin 3 to 5) 9 ) , ( max 450 m s if v on > v on(sc) ) i l(scp) t j =-40c: t j =25c: t j =+150c: 9 -- 4 -- 12 -- 23 -- 15 a overload shutdown current limit i l(scr) v on = 8 v, t j = t jt (see timing diagrams, page 10) -- 5 -- a short circuit shutdown dela y after input pos. slope v on > v on(sc) , t j =-40..+150c: min value valid only, if input "low" time exceeds 60 m s t d(sc) -- -- 450 m s output clamp (inductive load switch off) at v out = v bb - v on(cl) i l = 40 ma, t j =-40..+150c: v on(cl) 61 68 73 v i l = 1 a, t j =-40..+150c: -- -- 75 short circuit shutdown detection volta g e (pin 3 to 5) v on(sc) -- 8.5 -- v thermal overload trip temperature t jt 150 -- -- c thermal hysteresis d t jt -- 10 -- k reverse battery (pin 3 to 1) 10 ) - v bb -- -- 32 v diagnostic characteristics open load detection current (on-condition) t j =-40 ..150c: i l (ol) 2 -- 150 ma 8 ) add i st , if i st > 0, add i in , if v in >5.5 v 9 ) short circuit current limit for max. duration of t d(sc) max =450 m s, prior to shutdown 10 ) requires 150 w resistor in gnd connection. the reverse load current through the intrinsic drain-source diode has to be limited by the connected load. note that the power dissipation is higher compared to normal operating conditions due to the voltage drop across the intrinsic drain-source diode. the temperature protection is not active during reverse current operation! input and status currents have to be limited (see max. ratings page 2 and circuit page 7).
bts 410 d2 parameter and conditions symbol values unit at t j = 25 c, v bb = 12 v unless otherwise specified min typ max semiconductor group 5 input and status feedback 11 ) input turn-on threshold voltage
bts 410 d2 semiconductor group 6 truth table input- output status level level 412 b2 410 d2 410 e2/f2 410 g2 410 h2 normal operation l h l h h h h h h h h h h h open load l h 14 ) h l h h l h l h l l h short circuit to gnd l h l l h l h l h l h h h l short circuit to v bb l h h h l h h h (l 15 ) ) h h (l 15) ) h h (l 15) ) l h overtem- perature l h l l l l l l l l l l l l under- voltage l h l l l 16) l 16) l 16 ) l 16) h h h h h h overvoltage l h l l l l l l h h h h h h l = "low" level x = don't care z = high impedance, potential depends on external circuit h = "high" level status signal after the time delay shown in the diagrams (see fig 5. page 11...12) 14 ) power transistor off, high impedance, versions bts 410h, bts 412b: internal pull up current source for open load detection. 15 ) low resistance short v bb to output may be detected in on-state by the no-load-detection 16 ) no current sink capability during undervoltage shutdown terms profet v in st out gnd bb v st v in i st i in v bb i bb i l v out i gnd v on 1 2 4 3 5 r gnd input circuit (esd protection) in gnd i r zd zd i i i1 i2 esd- zd i1 6 v typ., esd zener diodes are not to be used as voltage clamp at dc conditions. operation in this mode may result in a drift of the zener voltage (increase of up to 1 v). status output st v logic gnd esd- zd zener diode: 6 v typ., max 5.0 ma, v logic 5 v typ, esd zener diodes are not to be used as voltage clamp at dc conditions. operation in this mode may result in a drift of the zener voltage (increase of up to 1 v).
bts 410 d2 semiconductor group 7 short circuit detection fault condition: v on > 8.5 v typ.; in high short circuit detection logic unit + v bb out v on inductive and overvoltage output clamp + v bb out gnd profet v z v on v on clamped to 68 v typ. overvolt. and reverse batt. protection + v bb in st st r in r gnd gnd r signal gnd logic profet v z2 v z1 v z1 = 6.2 v typ., v z2 = 70 v typ., r gnd = 150 w , r in , r st = 15 k w open-load detection on-state diagnostic condition: v on < r on * i l(ol) ; in high open load detection logic unit + v bb out on v on gnd disconnect profet v in st out gnd bb v bb 1 2 4 3 5 v in v st v gnd any kind of load. in case of input=high is v out ? v in - v in(t+) . due to v gnd >0, no v st = low signal available. gnd disconnect with gnd pull up profet v in st out gnd bb v bb 1 2 4 3 5 v gnd v in v st any kind of load. if v gnd > v in - v in(t+) device stays off due to v gnd >0, no v st = low signal available.
bts 410 d2 semiconductor group 8 v bb disconnect with energized inductive load profet v in st out gnd bb v bb 1 2 4 3 5 high normal load current can be handled by the profet itself. v bb disconnect with charged external inductive load profet v in st out gnd bb 1 2 4 3 5 v bb high s d if other external inductive loads l are connected to the profet, additional elements like d are necessary. inductive load switch-off energy dissipation profet v in st out gnd bb = e e e e as bb l r e load l r l { z l energy stored in load inductance: e l = 1 / 2 l i 2 l while demagnetizing load inductance, the energy dissipated in profet is e as = e bb + e l - e r = v on(cl) i l (t) dt, with an approximate solution for r l > 0 w : e as = i l l 2 r l ( v bb + |v out(cl) |) ln (1+ i l r l |v out(cl) | ) maximum allowable load inductance for a single switch off l = f (i l ); t j,start = 150c, t c = 150c const., v bb = 12 v, r l = 0 w l [mh] 1 10 100 1000 10000 123456 i l [a] typ. transient thermal impedance chip case z thjc = f (t p , d), d=t p /t z thjc [k/w] 0.01 0.1 1 10 1e-5 1e-4 1e-3 1e-2 1e-1 1e0 1e1 0 0.01 0.02 0.05 0.1 0.2 0.5 d= t p [s]
bts 410 d2 semiconductor group 9 options overview all versions: high-side switch, input protection, esd protection, load dump and reverse battery protection with 150 w in gnd connection, protection against loss of ground type bts 412 b2 410d2 410e2 410f2 410g2 410h2 307 308 logic version b d efgh overtemperature protection with hysteresis t j >150 c, latch function 17 ) 18 ) t j >150 c, with auto-restart on cooling x x x x x x x x short circuit to gnd protection switches off when v on >3.5 v typ. and v bb > 7 v typ 17 ) (when first turned on after approx. 150 m s) xx switches off when v on >8.5 v typ. 17) (when first turned on after approx. 150 m s) achieved through overtemperature protection x x xx x x open load detection in off-state with sensing current 30 m a typ. in on-state with sensing voltage drop across power transistor x x xxx xxx undervoltage shutdown with auto restart x x xxxxxx overvoltage shutdown with auto restart 19 ) x x xxxx - x status feedback for overtemperature short circuit to gnd short to v bb open load undervoltage overvoltage x x x x x x x x - 20) x x x x x - 20 ) x - - x x - 20) x - - x - - 20) x - - x x x x - - x x x x x - x x x x - - status output type cmos open drain x x xxxxxx output ne g ative volta g e transient limit (fast inductive load switch off) to v bb - v on(cl) x x xxxxxx load current limit high level (can handle loads with high inrush currents) low level (better protection of application) x x x xxxxx protection against loss of gnd x x xxxxxx 17 ) latch except when v bb - v out < v on(sc) after shutdown. in most cases v out = 0 v after shutdown ( v out 1 0 v only if forced externally). so the device remains latched unless v bb < v on(sc) (see page 4). no latch between turn on and t d(sc) . 18) with latch function. reseted by a) input low, b) undervoltage 19 ) no auto restart after overvoltage in case of short circuit 20 ) low resistance short v bb to output may be detected in on-state by the no-load-detection
bts 410 d2 semiconductor group 10 timing diagrams figure 1a: v bb turn on: in v out t v st cmos bb a a t d(bb in) in case of too early v in =high the device may not turn on (curve a) t d(bb in) approx. 150 m s figure 2a: switching a lamp, in st out l t v i figure 2b: switching an inductive load in st l t v i *) out t d(st) i l(ol) *) if the time constant of load is too large, open-load-status may occur figure 3a: turn on into short circuit, in st out l t v i t d(sc) t d(sc) approx. -- m s if v bb - v out > 8.5 v typ.
bts 410 d2 semiconductor group 11 figure 3b: turn on into overload, in st l t i l(scr) i l(scp) i heating up may require several seconds, v bb - v out < 8.5 v typ. figure 3c: short circuit while on: in st out l t v i **) **) current peak approx. 20 m s figure 4a: overtemperature, reset if (in=low) and ( t j < t jt ) in st out j t v t *) st goes high , when v in =low and t j < t jt figure 5a: open load: detection in on-state, turn on/off to open load in st out l t v i open t d(st)
bts 410 d2 semiconductor group 12 figure 5b: open load: detection in on-state, open load occurs in on-state in st out l t v i open normal normal t d(st ol1) t d(st ol2) t d(st ol1) = tbd m s typ., t d(st ol2) = tbd m s typ figure 6a: undervoltage: in v out t v bb st cmos v v bb(under) bb(u rst) bb(u cp) v figure 6b: undervoltage restart of charge pump bb(under) v v bb(u rst) v bb(over) v bb(o rst) v bb(u cp) off-state on-state v on(cl) v bb v on off-state charge pump starts at v bb(ucp) =5.6 v typ. figure 7a: overvoltage: in v out t v bb st on(cl) v v bb(over) v bb(o rst) if v bb > v bb(az) increase of v st due to gnd resistor voltage.
bts 410 d2 semiconductor group 13 figure 9a: overvoltage at short circuit shutdown: in v out t v bb st i l v bb(o rst) output short to gnd short circuit shutdown overvoltage due to power line inductance. no overvoltage auto- restart of profet after short circuit shutdown.
bts 410 d2 semiconductor group 14 package and ordering code all dimensions in mm standard to-220ab/5 ordering code bts 410 d2 q67060-s6101-a2 to-220ab/5, option e3043 ordering code bts 410 d2 e3043 q67060-s6101-a3 smd to-220ab/5, opt. e3062 ordering code BTS410D2 e3062a t&r: q67060-s6101-a4

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